Fairchild Semiconductor FDMD8900

Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
12-PowerWDFN
Rds On (Max) @ Id, Vgs:
4mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs:
35nC @ 10V
Current - Continuous Drain (Id) @ 25°C:
19A, 17A
Configuration:
2 N-Channel (Dual)
Manufacturer:
Fairchild Semiconductor
Drain to Source Voltage (Vdss):
30V
Input Capacitance (Ciss) (Max) @ Vds:
2605pF @ 15V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
12-Power3.3x5
Packaging:
Bulk
Power - Max:
2.1W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMD89
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDMD8900. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 12-powerwdfn. It has a maximum Rds On and voltage of 4mohm @ 19a, 10v. The maximum gate charge and given voltages include 35nc @ 10v. The continuous current drain at 25°C is 19a, 17a. The product is available in 2 n-channel (dual) configuration. The fairchild semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The product's input capacitance at maximum includes 2605pf @ 15v. The product is available in surface mount configuration. 12-power3.3x5 is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 2.1w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdmd89, a base product number of the product. The product is designated with the ear99 code number.

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Fairchild Semiconductor FDMD8900 and the best services all around the world ET22553102. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Fairchild Semiconductor FDMD8900, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Fairchild Semiconductor, commonly silicon.

Our Fairchild Semiconductor FDMD8900 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDMD8900. We stock a large inventory containing a wide range of variety ET22553102, differentiates by its unique features Fairchild Semiconductor. We also have discounts for potential customers and let it until most of them avail from Fairchild Semiconductor FDMD8900. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET22553102 from leading Fairchild Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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