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This is manufactured by Texas Instruments. The manufacturer part number is EFC4C002NLTDG. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 2.2v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-xfbga, wlcsp. The maximum gate charge and given voltages include 45nc @ 4.5v. The product is available in 2 n-channel (dual) common drain configuration. It is shipped in bulk package . The product's input capacitance at maximum includes 6200pf @ 15v. The product is available in surface mount configuration. 8-wlcsp (6x2.5) is the supplier device package value. The maximum power of the product is 2.6w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to efc4c002, a base product number of the product.
You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Texas Instruments EFC4C002NLTDG and the best services all around the world ET22552775. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Texas Instruments EFC4C002NLTDG, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Texas Instruments, commonly silicon.
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