NXP USA Inc. BUK9K89-100E,115

BUK9K89-100E-115 NXP USA Inc. BUK9K89-100E,115
NXP USA Inc.

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SOT-1205, 8-LFPAK56
Gate Charge (Qg) (Max) @ Vgs:
16.8nC @ 10V
Rds On (Max) @ Id, Vgs:
85mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C:
12.5A
Configuration:
2 N-Channel (Dual)
Package:
Bulk
Drain to Source Voltage (Vdss):
100V
Input Capacitance (Ciss) (Max) @ Vds:
1108pF @ 25V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchMOS™
Supplier Device Package:
LFPAK56D
Power - Max:
38W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BUK9K89
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is BUK9K89-100E,115. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.1v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sot-1205, 8-lfpak56. The maximum gate charge and given voltages include 16.8nc @ 10v. It has a maximum Rds On and voltage of 85mohm @ 5a, 10v. The continuous current drain at 25°C is 12.5a. The product is available in 2 n-channel (dual) configuration. It is shipped in bulk package . The product has a 100v drain to source voltage. The product's input capacitance at maximum includes 1108pf @ 25v. The product is available in surface mount configuration. The product automotive, aec-q101, trenchmos™, is a highly preferred choice for users. lfpak56d is the supplier device package value. The maximum power of the product is 38w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to buk9k89, a base product number of the product. The product is designated with the ear99 code number.

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BUK9K89-100E,115 Datasheet(Datasheets)

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