Infineon Technologies BSO612CVG

BSO612CVG Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 20µA, 4V @ 450µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
15.5nC @ 10V, 16nC @ 10V
Rds On (Max) @ Id, Vgs:
120mOhm @ 3A, 10V, 300mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C:
3A (Ta), 2A (Ta)
Configuration:
N and P-Channel
Package:
Bulk
Drain to Source Voltage (Vdss):
60V
Input Capacitance (Ciss) (Max) @ Vds:
340pF, 400pF @ 25V
Mounting Type:
Surface Mount
Series:
SIPMOS®
Supplier Device Package:
PG-DSO-8
Power - Max:
2W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSO612
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is BSO612CVG. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 20µa, 4v @ 450µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The maximum gate charge and given voltages include 15.5nc @ 10v, 16nc @ 10v. It has a maximum Rds On and voltage of 120mohm @ 3a, 10v, 300mohm @ 2a, 10v. The continuous current drain at 25°C is 3a (ta), 2a (ta). The product is available in n and p-channel configuration. It is shipped in bulk package . The product has a 60v drain to source voltage. The product's input capacitance at maximum includes 340pf, 400pf @ 25v. The product is available in surface mount configuration. The product sipmos®, is a highly preferred choice for users. pg-dso-8 is the supplier device package value. The maximum power of the product is 2w (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to bso612, a base product number of the product. The product is designated with the ear99 code number.

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