onsemi FDMA1025P

FDMA1025P onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-VDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
155mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
4.8nC @ 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
3.1A
Configuration:
2 P-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
450pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
6-MicroFET (2x2)
Packaging:
Cut Tape (CT)
Power - Max:
700mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMA1025
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FDMA1025P. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-vdfn exposed pad. It has a maximum Rds On and voltage of 155mohm @ 3.1a, 4.5v. The maximum gate charge and given voltages include 4.8nc @ 4.5v. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 3.1a. The product is available in 2 p-channel (dual) configuration. The onsemi's product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 450pf @ 10v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. 6-microfet (2x2) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 700mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdma1025, a base product number of the product. The product is designated with the ear99 code number.

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FDMA1025P(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Marking Content 19/Nov/2013(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi FDMA1025P and the best services all around the world ET22145614. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi FDMA1025P, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi FDMA1025P is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDMA1025P. We stock a large inventory containing a wide range of variety ET22145614, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FDMA1025P. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET22145614 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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