onsemi NTMD3N08LR2

NTMD3N08LR2 onsemi
NTMD3N08LR2
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
RoHS Status:
RoHS non-compliant
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
215mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
2.3A
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
80V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
480pF @ 25V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Packaging:
Bulk
Power - Max:
3.1W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMD3
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is NTMD3N08LR2. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs non-compliant. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 215mohm @ 2.5a, 10v. The maximum gate charge and given voltages include 15nc @ 10v. The typical Vgs (th) (max) of the product is 3v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 2.3a. The product is available in 2 n-channel (dual) configuration. The onsemi's product offers user-desired applications. The product has a 80v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 480pf @ 25v. The product is available in surface mount configuration. 8-soic is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 3.1w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmd3, a base product number of the product. The product is designated with the ear99 code number.

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Multiple Devices 21/Jan/2010(PCN Obsolescence/ EOL)
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NTMD3N08LR2(Datasheets)
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onsemi RoHS(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi NTMD3N08LR2 and the best services all around the world ET22134733. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi NTMD3N08LR2, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi NTMD3N08LR2 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NTMD3N08LR2. We stock a large inventory containing a wide range of variety ET22134733, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi NTMD3N08LR2. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET22134733 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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