Diodes Incorporated DMN32D4SDW-13

DMN32D4SDW-13 Diodes Incorporated
Diodes Incorporated

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
400mOhm @ 250mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
1.3nC @ 10V
Vgs(th) (Max) @ Id:
1.6V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
650mA
Configuration:
2 N-Channel (Dual)
Manufacturer:
Diodes Incorporated
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
20 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 15V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-363
Packaging:
Tape & Reel (TR)
Power - Max:
290mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMN32
ECCN:
EAR99
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This is manufactured by Diodes Incorporated. The manufacturer part number is DMN32D4SDW-13. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 400mohm @ 250ma, 10v. The maximum gate charge and given voltages include 1.3nc @ 10v. The typical Vgs (th) (max) of the product is 1.6v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 650ma. The product is available in 2 n-channel (dual) configuration. The diodes incorporated's product offers user-desired applications. The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 20 weeks standard lead time. The product's input capacitance at maximum includes 50pf @ 15v. The product is available in surface mount configuration. sot-363 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 290mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to dmn32, a base product number of the product. The product is designated with the ear99 code number.

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DMN32D4SDW(Datasheets)
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Diodes Environmental Compliance Cert(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Diodes Incorporated DMN32D4SDW-13 and the best services all around the world ET22088380. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Diodes Incorporated DMN32D4SDW-13, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Diodes Incorporated, commonly silicon.

Our Diodes Incorporated DMN32D4SDW-13 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at DMN32D4SDW-13. We stock a large inventory containing a wide range of variety ET22088380, differentiates by its unique features Diodes Incorporated. We also have discounts for potential customers and let it until most of them avail from Diodes Incorporated DMN32D4SDW-13. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET22088380 from leading Diodes Incorporated, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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