onsemi NVMFD5853NLT1G

NVMFD5853NLT1G onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
10mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs:
23nC @ 10V
Vgs(th) (Max) @ Id:
2.4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NVMFD5853NLT1G Models
Current - Continuous Drain (Id) @ 25°C:
12A
edacadModelUrl:
/en/models/4848936
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
40V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Qualification:
AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds:
1100pF @ 25V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
8-DFN (5x6) Dual Flag (SO8FL-Dual)
Packaging:
Tape & Reel (TR)
Power - Max:
3W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVMFD5853
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is NVMFD5853NLT1G. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 10mohm @ 15a, 10v. The maximum gate charge and given voltages include 23nc @ 10v. The typical Vgs (th) (max) of the product is 2.4v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 12a. The product is available in 2 n-channel (dual) configuration. The onsemi's product offers user-desired applications. The product has a 40v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1100pf @ 25v. The product is available in surface mount configuration. The product is automotive, a grade of class. 8-dfn (5x6) dual flag (so8fl-dual) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 3w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to nvmfd5853, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev EOL 06/Oct/2021(PCN Obsolescence/ EOL)
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NVMFD5853NL(WF)(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi NVMFD5853NLT1G and the best services all around the world ET21571892. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi NVMFD5853NLT1G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

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