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This is manufactured by onsemi. The manufacturer part number is NTMD6601NR2G. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 215mohm @ 2.2a, 10v. The maximum gate charge and given voltages include 15nc @ 10v. In addition, it is reach unaffected. The continuous current drain at 25°C is 1.1a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 80v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 400pf @ 25v. The product is available in surface mount configuration. 8-soic is the supplier device package value. The maximum power of the product is 600mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmd66, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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