onsemi NTMD6601NR2G

NTMD6601NR2G onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
215mOhm @ 2.2A, 10V
edacadModel:
NTMD6601NR2G Models
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 10V
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
1.1A
edacadModelUrl:
/en/models/2305687
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
80V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
400pF @ 25V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Power - Max:
600mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMD66
ECCN:
EAR99
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is NTMD6601NR2G. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 215mohm @ 2.2a, 10v. The maximum gate charge and given voltages include 15nc @ 10v. In addition, it is reach unaffected. The continuous current drain at 25°C is 1.1a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 80v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 400pf @ 25v. The product is available in surface mount configuration. 8-soic is the supplier device package value. The maximum power of the product is 600mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmd66, a base product number of the product. The product is designated with the ear99 code number.

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Multiple Devices 05/Oct/2010(PCN Obsolescence/ EOL)
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NTMD6601NR2G(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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Our onsemi NTMD6601NR2G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NTMD6601NR2G. We stock a large inventory containing a wide range of variety ET21571823, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi NTMD6601NR2G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21571823 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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