onsemi NTMD2P01R2

NTMD2P01R2 onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
100mOhm @ 2.4A, 4.5V
edacadModel:
NTMD2P01R2 Models
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 4.5V
RoHS Status:
RoHS non-compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
2.3A
edacadModelUrl:
/en/models/661147
Configuration:
2 P-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
16V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
750pF @ 16V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Power - Max:
710mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMD2P
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is NTMD2P01R2. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 100mohm @ 2.4a, 4.5v. The maximum gate charge and given voltages include 18nc @ 4.5v. The product is rohs non-compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 2.3a. The product is available in 2 p-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 16v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 750pf @ 16v. The product is available in surface mount configuration. 8-soic is the supplier device package value. The maximum power of the product is 710mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmd2p, a base product number of the product. The product is designated with the ear99 code number.

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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Multiple Devices Copper Wire 20/Aug/2008(PCN Design/Specification)
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Multiple Devices 30/Jun/2006(PCN Obsolescence/ EOL)
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NTMD2P01R2(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi NTMD2P01R2 and the best services all around the world ET21571821. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi NTMD2P01R2, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi NTMD2P01R2 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NTMD2P01R2. We stock a large inventory containing a wide range of variety ET21571821, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi NTMD2P01R2. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21571821 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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