onsemi NTMD2C02R2SG

NTMD2C02R2SG onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
43mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 4.5V
REACH Status:
REACH Unaffected
edacadModel:
NTMD2C02R2SG Models
Current - Continuous Drain (Id) @ 25°C:
5.2A, 3.4A
edacadModelUrl:
/en/models/1484905
Configuration:
N and P-Channel
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1100pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Power - Max:
2W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMD2C
ECCN:
EAR99
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is NTMD2C02R2SG. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 43mohm @ 4a, 4.5v. The maximum gate charge and given voltages include 20nc @ 4.5v. In addition, it is reach unaffected. The continuous current drain at 25°C is 5.2a, 3.4a. The product is available in n and p-channel configuration. The onsemi's product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1100pf @ 10v. The product is available in surface mount configuration. 8-soic is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 2w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmd2c, a base product number of the product. The product is designated with the ear99 code number.

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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Multiple Devices Copper Wire 20/Aug/2008(PCN Design/Specification)
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Multiple Devices 01/Oct/2008(PCN Obsolescence/ EOL)
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NTMD2C02R2(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi NTMD2C02R2SG and the best services all around the world ET21571820. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi NTMD2C02R2SG, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi NTMD2C02R2SG is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NTMD2C02R2SG. We stock a large inventory containing a wide range of variety ET21571820, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi NTMD2C02R2SG. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21571820 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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