onsemi NTZD3155CT1G

NTZD3155CT1G onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
550mOhm @ 540mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
2.5nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTZD3155CT1G Models
Current - Continuous Drain (Id) @ 25°C:
540mA, 430mA
edacadModelUrl:
/en/models/687102
Configuration:
N and P-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
150pF @ 16V
standardLeadTime:
33 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-563
Power - Max:
250mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTZD3155
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is NTZD3155CT1G. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-563, sot-666. It has a maximum Rds On and voltage of 550mohm @ 540ma, 4.5v. The maximum gate charge and given voltages include 2.5nc @ 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 540ma, 430ma. The product is available in n and p-channel configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 150pf @ 16v. It has a long 33 weeks standard lead time. The product is available in surface mount configuration. sot-563 is the supplier device package value. The maximum power of the product is 250mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntzd3155, a base product number of the product. The product is designated with the ear99 code number.

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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mult Dev 24/Apr/2020(PCN Assembly/Origin)
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NTZD3155C(Datasheets)
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Carrier Tape 15/Aug/2017(PCN Packaging)
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Mult Devices 27/Oct/2017(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi NTZD3155CT1G and the best services all around the world ET21568121. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi NTZD3155CT1G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi NTZD3155CT1G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NTZD3155CT1G. We stock a large inventory containing a wide range of variety ET21568121, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi NTZD3155CT1G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21568121 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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