onsemi NTMFD4901NFT1G

NTMFD4901NFT1G onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
9.7nC @ 4.5V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NTMFD4901NFT1G Models
Current - Continuous Drain (Id) @ 25°C:
10.3A, 17.9A
edacadModelUrl:
/en/models/2797261
Configuration:
2 N-Channel (Dual), Schottky
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1150pF @ 15V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Packaging:
Tape & Reel (TR)
Power - Max:
1.1W, 1.2W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMFD4901
ECCN:
EAR99
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is NTMFD4901NFT1G. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 6.5mohm @ 10a, 10v. The maximum gate charge and given voltages include 9.7nc @ 4.5v. The typical Vgs (th) (max) of the product is 2.2v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 10.3a, 17.9a. The product is available in 2 n-channel (dual), schottky configuration. The onsemi's product offers user-desired applications. The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1150pf @ 15v. The product is available in surface mount configuration. 8-dfn (5x6) dual flag (so8fl-dual-asymmetrical) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 1.1w, 1.2w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmfd4901, a base product number of the product. The product is designated with the ear99 code number.

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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Wafer Capacity Expansion 21/May/2015(PCN Assembly/Origin)
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Mult Dev EOL 01/Oct/2021(PCN Obsolescence/ EOL)
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NTMFD4901NF(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi NTMFD4901NFT1G and the best services all around the world ET21567752. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi NTMFD4901NFT1G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi NTMFD4901NFT1G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NTMFD4901NFT1G. We stock a large inventory containing a wide range of variety ET21567752, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi NTMFD4901NFT1G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21567752 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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