onsemi NTMD6N04R2G

NTMD6N04R2G onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
34mOhm @ 5.8A, 10V
edacadModel:
NTMD6N04R2G Models
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
4.6A
edacadModelUrl:
/en/models/1853674
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
900pF @ 32V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Power - Max:
1.29W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMD6
ECCN:
EAR99
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is NTMD6N04R2G. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 34mohm @ 5.8a, 10v. The maximum gate charge and given voltages include 30nc @ 10v. In addition, it is reach unaffected. The continuous current drain at 25°C is 4.6a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 40v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 900pf @ 32v. The product is available in surface mount configuration. 8-soic is the supplier device package value. The maximum power of the product is 1.29w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmd6, a base product number of the product. The product is designated with the ear99 code number.

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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Multiple Devices Copper Wire 20/Aug/2008(PCN Design/Specification)
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Multiple Devices Update 28/Jun/2011(PCN Obsolescence/ EOL)
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Multiple Devices 27/Jun/2014(PCN Obsolescence/ EOL)
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NTMD6N04R2(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi NTMD6N04R2G and the best services all around the world ET21567750. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi NTMD6N04R2G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi NTMD6N04R2G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NTMD6N04R2G. We stock a large inventory containing a wide range of variety ET21567750, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi NTMD6N04R2G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21567750 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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