onsemi NTLJD3115PT1G

NTLJD3115PT1G onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
100mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
6.2nC @ 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
2.3A
Configuration:
2 P-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
18 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
531pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-WDFN (2x2)
Packaging:
Tape & Reel (TR)
Power - Max:
710mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTLJD3115
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is NTLJD3115PT1G. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-wdfn exposed pad. It has a maximum Rds On and voltage of 100mohm @ 2a, 4.5v. The maximum gate charge and given voltages include 6.2nc @ 4.5v. The typical Vgs (th) (max) of the product is 1v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 2.3a. The product is available in 2 p-channel (dual) configuration. The onsemi's product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 18 weeks standard lead time. The product's input capacitance at maximum includes 531pf @ 10v. The product is available in surface mount configuration. 6-wdfn (2x2) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 710mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntljd3115, a base product number of the product. The product is designated with the ear99 code number.

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NTLJD3115P(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Covering Tape/Material Chg 20/May/2016(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi NTLJD3115PT1G and the best services all around the world ET21567703. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi NTLJD3115PT1G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi NTLJD3115PT1G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NTLJD3115PT1G. We stock a large inventory containing a wide range of variety ET21567703, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi NTLJD3115PT1G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21567703 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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