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This is manufactured by onsemi. The manufacturer part number is NTGD3148NT1G. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -50°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 70mohm @ 3.5a, 4.5v. The maximum gate charge and given voltages include 3.8nc @ 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 3a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 300pf @ 10v. It has a long 14 weeks standard lead time. The product is available in surface mount configuration. 6-tsop is the supplier device package value. The maximum power of the product is 900mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntgd3148, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi NTGD3148NT1G and the best services all around the world ET21567649. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi NTGD3148NT1G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.
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