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This is manufactured by onsemi. The manufacturer part number is NSTJD4001NT1G. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. In addition, it is reach unaffected. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). Moreover, it corresponds to nstjd4, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi NSTJD4001NT1G and the best services all around the world ET21567261. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi NSTJD4001NT1G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.
Our onsemi NSTJD4001NT1G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NSTJD4001NT1G. We stock a large inventory containing a wide range of variety ET21567261, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi NSTJD4001NT1G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21567261 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157
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