onsemi NDS8858H

NDS8858H onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.8V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
35mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C:
6.3A, 4.8A
Configuration:
N and P-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
720pF @ 15V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Power - Max:
1W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDS885
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is NDS8858H. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.8v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The maximum gate charge and given voltages include 30nc @ 10v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 35mohm @ 4.8a, 10v. The continuous current drain at 25°C is 6.3a, 4.8a. The product is available in n and p-channel configuration. It is shipped in tape & reel (tr) package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 720pf @ 15v. The product is available in surface mount configuration. 8-soic is the supplier device package value. The maximum power of the product is 1w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to nds885, a base product number of the product. The product is designated with the ear99 code number.

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NDS8858H(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi NDS8858H and the best services all around the world ET21566051. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi NDS8858H, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi NDS8858H is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NDS8858H. We stock a large inventory containing a wide range of variety ET21566051, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi NDS8858H. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21566051 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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