onsemi NVMFD5877NLWFT1G

NVMFD5877NLWFT1G onsemi
NVMFD5877NLWFT1G
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
39mOhm @ 7.5A, 10V
title:
NVMFD5877NLWFT1G
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NVMFD5877NLWFT1G Models
Current - Continuous Drain (Id) @ 25°C:
6A
edacadModelUrl:
/en/models/4848942
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
60V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Qualification:
AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds:
540pF @ 25V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V
Supplier Device Package:
8-DFN (5x6) Dual Flag (SO8FL-Dual)
Packaging:
Tape & Reel (TR)
Power - Max:
3.2W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVMFD5877
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is NVMFD5877NLWFT1G. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 39mohm @ 7.5a, 10v. The typical Vgs (th) (max) of the product is 3v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 6a. The product is available in 2 n-channel (dual) configuration. The onsemi's product offers user-desired applications. The product has a 60v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 540pf @ 25v. The product is available in surface mount configuration. The product is automotive, a grade of class. The maximum gate charge and given voltages include 20nc @ 10v. 8-dfn (5x6) dual flag (so8fl-dual) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 3.2w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to nvmfd5877, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev obs 09/Apr/2024(PCN Obsolescence/ EOL)
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Mult Dev EOL 21/Dec/2021(PCN Obsolescence/ EOL)
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NVMFD5877NL(Datasheets)
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onsemi RoHS(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi NVMFD5877NLWFT1G and the best services all around the world ET21546923. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi NVMFD5877NLWFT1G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi NVMFD5877NLWFT1G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NVMFD5877NLWFT1G. We stock a large inventory containing a wide range of variety ET21546923, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi NVMFD5877NLWFT1G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21546923 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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