onsemi NTMFD4C86NT1G

NTMFD4C86NT1G onsemi
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
22.2nC @ 10V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
5.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C:
11.3A, 18.1A
Configuration:
2 N-Channel (Dual) Asymmetrical
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1153pF @ 15V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-DFN (5x6)
Power - Max:
1.1W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMFD4
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is NTMFD4C86NT1G. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. The maximum gate charge and given voltages include 22.2nc @ 10v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 5.4mohm @ 30a, 10v. The continuous current drain at 25°C is 11.3a, 18.1a. The product is available in 2 n-channel (dual) asymmetrical configuration. It is shipped in tape & reel (tr) package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1153pf @ 15v. The product is available in surface mount configuration. 8-dfn (5x6) is the supplier device package value. The maximum power of the product is 1.1w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmfd4, a base product number of the product. The product is designated with the ear99 code number.

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NTMF/NTTF 27/Jan/2017(PCN Assembly/Origin)
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NTMFD4C86N(Datasheets)
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3Q Mult Dev EOL 9/Nov/2017(PCN Obsolescence/ EOL)
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onsemi RoHS(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi NTMFD4C86NT1G and the best services all around the world ET21546490. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi NTMFD4C86NT1G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi NTMFD4C86NT1G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NTMFD4C86NT1G. We stock a large inventory containing a wide range of variety ET21546490, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi NTMFD4C86NT1G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21546490 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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