onsemi NTMD3P03R2G

NTMD3P03R2G onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
85mOhm @ 3.05A, 10V
Gate Charge (Qg) (Max) @ Vgs:
25nC @ 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NTMD3P03R2G Models
Current - Continuous Drain (Id) @ 25°C:
2.34A
edacadModelUrl:
/en/models/921584
Configuration:
2 P-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
19 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
750pF @ 24V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Power - Max:
730mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMD3
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is NTMD3P03R2G. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 85mohm @ 3.05a, 10v. The maximum gate charge and given voltages include 25nc @ 10v. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 2.34a. The product is available in 2 p-channel (dual) configuration. The onsemi's product offers user-desired applications. The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 19 weeks standard lead time. The product's input capacitance at maximum includes 750pf @ 24v. The product is available in surface mount configuration. 8-soic is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 730mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmd3, a base product number of the product. The product is designated with the ear99 code number.

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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Multiple Devices Copper Wire 20/Aug/2008(PCN Design/Specification)
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N(T,V)MD3P03(Datasheets)
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Mult MSL1 Pkg Chg 20/Dec/2018(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi NTMD3P03R2G and the best services all around the world ET21546477. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi NTMD3P03R2G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi NTMD3P03R2G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NTMD3P03R2G. We stock a large inventory containing a wide range of variety ET21546477, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi NTMD3P03R2G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21546477 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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