onsemi NTJD5121NT2G

NTJD5121NT2G onsemi
NTJD5121NT2G
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
0.9nC @ 4.5V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NTJD5121NT2G Models
Current - Continuous Drain (Id) @ 25°C:
295mA
edacadModelUrl:
/en/models/2194168
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
60V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
26pF @ 20V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-88/SC70-6/SOT-363
Packaging:
Tape & Reel (TR)
Power - Max:
250mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTJD5121
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is NTJD5121NT2G. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 1.6ohm @ 500ma, 10v. The maximum gate charge and given voltages include 0.9nc @ 4.5v. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 295ma. The product is available in 2 n-channel (dual) configuration. The onsemi's product offers user-desired applications. The product has a 60v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 16 weeks standard lead time. The product's input capacitance at maximum includes 26pf @ 20v. The product is available in surface mount configuration. sc-88/sc70-6/sot-363 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 250mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntjd5121, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev A/Mat Chg 14/May/2021(PCN Assembly/Origin)
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NTJD5121N, NVJD5121N(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi NTJD5121NT2G and the best services all around the world ET21546425. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi NTJD5121NT2G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi NTJD5121NT2G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NTJD5121NT2G. We stock a large inventory containing a wide range of variety ET21546425, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi NTJD5121NT2G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21546425 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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