onsemi NTJD4152PT2G

NTJD4152PT2G onsemi
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
260mOhm @ 880mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
2.2nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTJD4152PT2G Models
Current - Continuous Drain (Id) @ 25°C:
880mA
edacadModelUrl:
/en/models/5817335
Configuration:
2 P-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
155pF @ 20V
standardLeadTime:
17 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-88/SC70-6/SOT-363
Power - Max:
272mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTJD4152
ECCN:
EAR99
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is NTJD4152PT2G. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 260mohm @ 880ma, 4.5v. The maximum gate charge and given voltages include 2.2nc @ 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 880ma. The product is available in 2 p-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 155pf @ 20v. It has a long 17 weeks standard lead time. The product is available in surface mount configuration. sc-88/sc70-6/sot-363 is the supplier device package value. The maximum power of the product is 272mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntjd4152, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev A/Mat Chg 14/May/2021(PCN Assembly/Origin)
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NTJD4152P(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi NTJD4152PT2G and the best services all around the world ET21546419. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi NTJD4152PT2G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi NTJD4152PT2G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NTJD4152PT2G. We stock a large inventory containing a wide range of variety ET21546419, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi NTJD4152PT2G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21546419 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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