onsemi NTJD4105CT1G

NTJD4105CT1G onsemi
NTJD4105CT1G
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
375mOhm @ 630mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
3nC @ 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NTJD4105CT1G Models
Current - Continuous Drain (Id) @ 25°C:
630mA, 775mA
edacadModelUrl:
/en/models/661396
Configuration:
N and P-Channel
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
20V, 8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
18 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
46pF @ 20V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-88/SC70-6/SOT-363
Packaging:
Tape & Reel (TR)
Power - Max:
270mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTJD4105
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is NTJD4105CT1G. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 375mohm @ 630ma, 4.5v. The maximum gate charge and given voltages include 3nc @ 4.5v. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 630ma, 775ma. The product is available in n and p-channel configuration. The onsemi's product offers user-desired applications. The product has a 20v, 8v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 18 weeks standard lead time. The product's input capacitance at maximum includes 46pf @ 20v. The product is available in surface mount configuration. sc-88/sc70-6/sot-363 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 270mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntjd4105, a base product number of the product. The product is designated with the ear99 code number.

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NTJD4105C(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi NTJD4105CT1G and the best services all around the world ET21546413. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi NTJD4105CT1G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi NTJD4105CT1G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NTJD4105CT1G. We stock a large inventory containing a wide range of variety ET21546413, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi NTJD4105CT1G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21546413 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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