onsemi MVDF2C03HDR2G

MVDF2C03HDR2G onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
70mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
16nC @ 10V
REACH Status:
REACH Unaffected
edacadModel:
MVDF2C03HDR2G Models
Current - Continuous Drain (Id) @ 25°C:
4.1A, 3A
edacadModelUrl:
/en/models/3062074
Configuration:
N and P-Channel Complementary
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
630pF @ 24V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Power - Max:
2W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
MVDF2
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is MVDF2C03HDR2G. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 70mohm @ 3a, 10v. The maximum gate charge and given voltages include 16nc @ 10v. In addition, it is reach unaffected. The continuous current drain at 25°C is 4.1a, 3a. The product is available in n and p-channel complementary configuration. The onsemi's product offers user-desired applications. The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 630pf @ 24v. The product is available in surface mount configuration. 8-soic is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 2w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to mvdf2, a base product number of the product. The product is designated with the ear99 code number.

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Multiple Devices 04/Jan/2013(PCN Obsolescence/ EOL)
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MVDF2C03HD(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi MVDF2C03HDR2G and the best services all around the world ET21539231. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi MVDF2C03HDR2G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi MVDF2C03HDR2G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at MVDF2C03HDR2G. We stock a large inventory containing a wide range of variety ET21539231, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi MVDF2C03HDR2G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21539231 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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