onsemi FW217A-TL-2W

FW217A-TL-2W onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate, 4.5V Drive
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
39mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 10V
Vgs(th) (Max) @ Id:
-
REACH Status:
REACH Unaffected
edacadModel:
FW217A-TL-2W Models
Current - Continuous Drain (Id) @ 25°C:
6A
edacadModelUrl:
/en/models/5404307
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
35V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
470pF @ 20V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Power - Max:
2.2W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FW217
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FW217A-TL-2W. The FET features of the product include logic level gate, 4.5v drive. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 39mohm @ 6a, 10v. The maximum gate charge and given voltages include 10nc @ 10v. In addition, it is reach unaffected. The continuous current drain at 25°C is 6a. The product is available in 2 n-channel (dual) configuration. The onsemi's product offers user-desired applications. The product has a 35v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 470pf @ 20v. The product is available in surface mount configuration. 8-soic is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 2.2w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fw217, a base product number of the product. The product is designated with the ear99 code number.

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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Wafer Fab Site Japan 9/Nov/2015(PCN Assembly/Origin)
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Mult Dev EOL 7/Apr/2021(PCN Obsolescence/ EOL)
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FW217A(Datasheets)
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Mult MSL1 Pkg Rev 20/Dec/2018(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi FW217A-TL-2W and the best services all around the world ET21521293. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi FW217A-TL-2W, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi FW217A-TL-2W is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FW217A-TL-2W. We stock a large inventory containing a wide range of variety ET21521293, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FW217A-TL-2W. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21521293 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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