onsemi FQS4900TF

FQS4900TF onsemi
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
550mOhm @ 650mA, 10V
title:
FQS4900TF
Vgs(th) (Max) @ Id:
1.95V @ 20mA
REACH Status:
REACH Unaffected
edacadModel:
FQS4900TF Models
Current - Continuous Drain (Id) @ 25°C:
1.3A, 300mA
edacadModelUrl:
/en/models/1054297
Configuration:
N and P-Channel
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
60V, 300V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
-
Mounting Type:
Surface Mount
Series:
QFET®
Gate Charge (Qg) (Max) @ Vgs:
2.1nC @ 5V
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Power - Max:
2W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQS4900
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FQS4900TF. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 550mohm @ 650ma, 10v. The typical Vgs (th) (max) of the product is 1.95v @ 20ma. In addition, it is reach unaffected. The continuous current drain at 25°C is 1.3a, 300ma. The product is available in n and p-channel configuration. The onsemi's product offers user-desired applications. The product has a 60v, 300v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. The product qfet®, is a highly preferred choice for users. The maximum gate charge and given voltages include 2.1nc @ 5v. 8-soic is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 2w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fqs4900, a base product number of the product. The product is designated with the ear99 code number.

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Alt. Assembly Location 03/Mar/2016(PCN Assembly/Origin)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Device Marking Update 02/Jul/2015(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi FQS4900TF and the best services all around the world ET21520486. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi FQS4900TF, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi FQS4900TF is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FQS4900TF. We stock a large inventory containing a wide range of variety ET21520486, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FQS4900TF. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21520486 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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