onsemi FDW2508PB

FDW2508PB onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-TSSOP (0.173", 4.40mm Width)
Rds On (Max) @ Id, Vgs:
18mOhm @ 6A, 4.5V
title:
FDW2508PB
REACH Status:
REACH Unaffected
edacadModel:
FDW2508PB Models
Current - Continuous Drain (Id) @ 25°C:
6A
edacadModelUrl:
/en/models/1305768
Configuration:
2 P-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
3775pF @ 6V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
45nC @ 4.5V
Supplier Device Package:
8-TSSOP
Packaging:
Tape & Reel (TR)
Power - Max:
1W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDW25
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FDW2508PB. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-tssop (0.173", 4.40mm width). It has a maximum Rds On and voltage of 18mohm @ 6a, 4.5v. In addition, it is reach unaffected. The continuous current drain at 25°C is 6a. The product is available in 2 p-channel (dual) configuration. The onsemi's product offers user-desired applications. The product has a 12v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 3775pf @ 6v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. The maximum gate charge and given voltages include 45nc @ 4.5v. 8-tssop is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 1w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdw25, a base product number of the product. The product is designated with the ear99 code number.

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FDW2508PB(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi FDW2508PB and the best services all around the world ET21517352. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi FDW2508PB, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi FDW2508PB is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDW2508PB. We stock a large inventory containing a wide range of variety ET21517352, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FDW2508PB. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21517352 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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