onsemi FDS8958B_G

FDS8958B_G onsemi
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
26mOhm @ 6.4A, 10V, 51mOhm @ 4.5A, 10V
title:
FDS8958B_G
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
6.4A, 4.5A
Configuration:
N and P-Channel
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
540pF @ 15V, 760pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
5.8nC @ 4.5V, 9.6nC @ 4.5V
Supplier Device Package:
8-SO
Packaging:
Tape & Reel (TR)
Power - Max:
900mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS89
ECCN:
EAR99
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is FDS8958B_G. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 26mohm @ 6.4a, 10v, 51mohm @ 4.5a, 10v. In addition, it is reach unaffected. The continuous current drain at 25°C is 6.4a, 4.5a. The product is available in n and p-channel configuration. The onsemi's product offers user-desired applications. The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 540pf @ 15v, 760pf @ 15v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. The maximum gate charge and given voltages include 5.8nc @ 4.5v, 9.6nc @ 4.5v. 8-so is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 900mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fds89, a base product number of the product. The product is designated with the ear99 code number.

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Mult Device EOL 19/May/2017(PCN Obsolescence/ EOL)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Logo 17/Aug/2017(PCN Design/Specification)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi FDS8958B_G and the best services all around the world ET21517276. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi FDS8958B_G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi FDS8958B_G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDS8958B_G. We stock a large inventory containing a wide range of variety ET21517276, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FDS8958B_G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21517276 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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