onsemi FDS8926A

FDS8926A onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
30mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
28nC @ 4.5V
REACH Status:
REACH Unaffected
edacadModel:
FDS8926A Models
Current - Continuous Drain (Id) @ 25°C:
5.5A
edacadModelUrl:
/en/models/976853
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
900pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Power - Max:
900mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS89
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FDS8926A. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 30mohm @ 5.5a, 4.5v. The maximum gate charge and given voltages include 28nc @ 4.5v. In addition, it is reach unaffected. The continuous current drain at 25°C is 5.5a. The product is available in 2 n-channel (dual) configuration. The onsemi's product offers user-desired applications. The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 900pf @ 10v. The product is available in surface mount configuration. 8-soic is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 900mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fds89, a base product number of the product. The product is designated with the ear99 code number.

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FDS8926A(Datasheets)
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onsemi RoHS(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi FDS8926A and the best services all around the world ET21517267. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi FDS8926A, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi FDS8926A is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDS8926A. We stock a large inventory containing a wide range of variety ET21517267, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FDS8926A. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21517267 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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