onsemi FDR8308P

FDR8308P onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-LSOP (0.130", 3.30mm Width)
Rds On (Max) @ Id, Vgs:
50mOhm @ 3.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
19nC @ 4.5V
REACH Status:
REACH Unaffected
edacadModel:
FDR8308P Models
Current - Continuous Drain (Id) @ 25°C:
3.2A
edacadModelUrl:
/en/models/977992
Configuration:
2 P-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1240pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SuperSOT™-8
Packaging:
Tape & Reel (TR)
Power - Max:
800mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDR83
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FDR8308P. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-lsop (0.130", 3.30mm width). It has a maximum Rds On and voltage of 50mohm @ 3.2a, 4.5v. The maximum gate charge and given voltages include 19nc @ 4.5v. In addition, it is reach unaffected. The continuous current drain at 25°C is 3.2a. The product is available in 2 p-channel (dual) configuration. The onsemi's product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1240pf @ 10v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. supersot™-8 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 800mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdr83, a base product number of the product. The product is designated with the ear99 code number.

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FDR8308P(Datasheets)
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onsemi RoHS(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi FDR8308P and the best services all around the world ET21517108. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi FDR8308P, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi FDR8308P is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDR8308P. We stock a large inventory containing a wide range of variety ET21517108, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FDR8308P. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21517108 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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