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This is manufactured by onsemi. The manufacturer part number is FDMS3660S-F121. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.7v @ 250µa. Moreover, the product comes in 8-powertdfn. The maximum gate charge and given voltages include 29nc @ 10v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 8mohm @ 13a, 10v. The continuous current drain at 25°C is 13a, 30a. The product is available in 2 n-channel (dual) asymmetrical configuration. It is shipped in tape & reel (tr) package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1765pf @ 15v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. power56 is the supplier device package value. The maximum power of the product is 1w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdms3660, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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Our onsemi FDMS3660S-F121 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDMS3660S-F121. We stock a large inventory containing a wide range of variety ET21516810, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FDMS3660S-F121. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21516810 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157
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