onsemi FDMJ1028N

FDMJ1028N onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
3nC @ 4.5V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
90mOhm @ 3.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C:
3.2A
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
200pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
MicroFET 2x2 Thin
Power - Max:
800mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMJ1028
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FDMJ1028N. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-udfn exposed pad. The maximum gate charge and given voltages include 3nc @ 4.5v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 90mohm @ 3.2a, 4.5v. The continuous current drain at 25°C is 3.2a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 200pf @ 10v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. microfet 2x2 thin is the supplier device package value. The maximum power of the product is 800mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdmj1028, a base product number of the product. The product is designated with the ear99 code number.

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FDMJ1028N(Datasheets)
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onsemi RoHS(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi FDMJ1028N and the best services all around the world ET21516751. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi FDMJ1028N, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi FDMJ1028N is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDMJ1028N. We stock a large inventory containing a wide range of variety ET21516751, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FDMJ1028N. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21516751 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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