onsemi FDMD8900

FDMD8900 onsemi
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
12-PowerWDFN
Rds On (Max) @ Id, Vgs:
4mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs:
35nC @ 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
19A, 17A
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
2605pF @ 15V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
12-Power3.3x5
Packaging:
Tape & Reel (TR)
Power - Max:
2.1W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMD89
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FDMD8900. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 12-powerwdfn. It has a maximum Rds On and voltage of 4mohm @ 19a, 10v. The maximum gate charge and given voltages include 35nc @ 10v. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 19a, 17a. The product is available in 2 n-channel (dual) configuration. The onsemi's product offers user-desired applications. The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 2605pf @ 15v. The product is available in surface mount configuration. 12-power3.3x5 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 2.1w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdmd89, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev EOL 8/Apr/2021(PCN Obsolescence/ EOL)
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FDMD8900(Datasheets)
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onsemi RoHS(Environmental Information)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi FDMD8900 and the best services all around the world ET21516693. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi FDMD8900, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi FDMD8900 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDMD8900. We stock a large inventory containing a wide range of variety ET21516693, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FDMD8900. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21516693 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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