onsemi FDMD82100

FDMD82100 onsemi
FDMD82100
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
12-PowerWDFN
Rds On (Max) @ Id, Vgs:
19mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
7A
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
100V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1070pF @ 50V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
12-Power3.3x5
Packaging:
Tape & Reel (TR)
Power - Max:
1W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMD82
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FDMD82100. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 12-powerwdfn. It has a maximum Rds On and voltage of 19mohm @ 7a, 10v. The maximum gate charge and given voltages include 17nc @ 10v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 7a. The product is available in 2 n-channel (dual) configuration. The onsemi's product offers user-desired applications. The product has a 100v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1070pf @ 50v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. 12-power3.3x5 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 1w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdmd82, a base product number of the product. The product is designated with the ear99 code number.

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onsemi RoHS(Environmental Information)
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Mult Dev Assembly 11/Mar/2020(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 29/Mar/2022(PCN Obsolescence/ EOL)
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FDMD82100(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

Reviews

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi FDMD82100 and the best services all around the world ET21516676. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi FDMD82100, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi FDMD82100 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDMD82100. We stock a large inventory containing a wide range of variety ET21516676, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FDMD82100. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21516676 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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