onsemi FDMB3900AN

FDMB3900AN onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
23mOhm @ 7A, 10V
edacadModel:
FDMB3900AN Models
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
7A
edacadModelUrl:
/en/models/3163279
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
890pF @ 13V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-MLP, MicroFET (3x1.9)
Power - Max:
800mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMB3900
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FDMB3900AN. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. It has a maximum Rds On and voltage of 23mohm @ 7a, 10v. The maximum gate charge and given voltages include 17nc @ 10v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 7a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 25v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 890pf @ 13v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. 8-mlp, microfet (3x1.9) is the supplier device package value. The maximum power of the product is 800mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdmb3900, a base product number of the product. The product is designated with the ear99 code number.

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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Qualify 2nd supplier 13/Aug/2020(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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Obsolete Notice 15/Dec/2022(PCN Obsolescence/ EOL)
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FDMB3900AN(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi FDMB3900AN and the best services all around the world ET21516577. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi FDMB3900AN, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi FDMB3900AN is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDMB3900AN. We stock a large inventory containing a wide range of variety ET21516577, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FDMB3900AN. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21516577 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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