onsemi FDMA1029PZ

FDMA1029PZ onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
95mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
FDMA1029PZ Models
Current - Continuous Drain (Id) @ 25°C:
3.1A
edacadModelUrl:
/en/models/1154597
Configuration:
2 P-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
540pF @ 10V
standardLeadTime:
8 Weeks
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
6-WDFN (2x2)
Power - Max:
700mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMA1029
ECCN:
EAR99
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is FDMA1029PZ. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-wdfn exposed pad. It has a maximum Rds On and voltage of 95mohm @ 3.1a, 4.5v. The maximum gate charge and given voltages include 10nc @ 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 3.1a. The product is available in 2 p-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 540pf @ 10v. It has a long 8 weeks standard lead time. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. 6-wdfn (2x2) is the supplier device package value. The maximum power of the product is 700mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdma1029, a base product number of the product. The product is designated with the ear99 code number.

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onsemi RoHS(Environmental Information)
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Qualify 2nd supplier 13/Aug/2020(PCN Assembly/Origin)
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Marking Content 19/Nov/2013(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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FDMA1029PZ(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi FDMA1029PZ and the best services all around the world ET21516549. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi FDMA1029PZ, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi FDMA1029PZ is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDMA1029PZ. We stock a large inventory containing a wide range of variety ET21516549, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FDMA1029PZ. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21516549 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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Yes. We ship FDMA1029PZ Internationally to many countries around the world.