onsemi FDM2509NZ

FDM2509NZ onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
18mOhm @ 8.7A, 4.5V
title:
FDM2509NZ
REACH Status:
REACH Unaffected
edacadModel:
FDM2509NZ Models
Current - Continuous Drain (Id) @ 25°C:
8.7A
edacadModelUrl:
/en/models/975822
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1200pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 4.5V
Supplier Device Package:
MicroFET 2x2 Thin
Packaging:
Tape & Reel (TR)
Power - Max:
800mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDM2509
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FDM2509NZ. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-udfn exposed pad. It has a maximum Rds On and voltage of 18mohm @ 8.7a, 4.5v. In addition, it is reach unaffected. The continuous current drain at 25°C is 8.7a. The product is available in 2 n-channel (dual) configuration. The onsemi's product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1200pf @ 10v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. The maximum gate charge and given voltages include 17nc @ 4.5v. microfet 2x2 thin is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 800mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdm2509, a base product number of the product. The product is designated with the ear99 code number.

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FDM2509NZ(Datasheets)
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onsemi RoHS(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi FDM2509NZ and the best services all around the world ET21516536. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi FDM2509NZ, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi FDM2509NZ is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDM2509NZ. We stock a large inventory containing a wide range of variety ET21516536, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FDM2509NZ. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21516536 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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