onsemi FDG6318PZ

FDG6318PZ onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
780mOhm @ 500mA, 4.5V
edacadModel:
FDG6318PZ Models
Gate Charge (Qg) (Max) @ Vgs:
1.62nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
500mA
edacadModelUrl:
/en/models/979814
Configuration:
2 P-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
85.4pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-88 (SC-70-6)
Power - Max:
300mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDG6318
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FDG6318PZ. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 780mohm @ 500ma, 4.5v. The maximum gate charge and given voltages include 1.62nc @ 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 500ma. The product is available in 2 p-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 85.4pf @ 10v. The product is available in surface mount configuration. sc-88 (sc-70-6) is the supplier device package value. The maximum power of the product is 300mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdg6318, a base product number of the product. The product is designated with the ear99 code number.

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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mult Dev Assem/Material Chg 11/Mar/2019(PCN Assembly/Origin)
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Mold Compound 12/Dec/2007(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 12/Aug/2020(PCN Obsolescence/ EOL)
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FDG6318PZ(Datasheets)
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Binary Year Code Marking 15/Jan/2014(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)

Reviews

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi FDG6318PZ and the best services all around the world ET21516461. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi FDG6318PZ, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi FDG6318PZ is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDG6318PZ. We stock a large inventory containing a wide range of variety ET21516461, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FDG6318PZ. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21516461 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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