onsemi FDG6301N

FDG6301N onsemi
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
4Ohm @ 220mA, 4.5V
title:
FDG6301N
Vgs(th) (Max) @ Id:
1.5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FDG6301N Models
Current - Continuous Drain (Id) @ 25°C:
220mA
edacadModelUrl:
/en/models/965292
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
10 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
9.5pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
0.4nC @ 4.5V
Supplier Device Package:
SC-88 (SC-70-6)
Packaging:
Tape & Reel (TR)
Power - Max:
300mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDG6301
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FDG6301N. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 4ohm @ 220ma, 4.5v. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 220ma. The product is available in 2 n-channel (dual) configuration. The onsemi's product offers user-desired applications. The product has a 25v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 10 weeks standard lead time. The product's input capacitance at maximum includes 9.5pf @ 10v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 0.4nc @ 4.5v. sc-88 (sc-70-6) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 300mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdg6301, a base product number of the product. The product is designated with the ear99 code number.

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onsemi RoHS(Environmental Information)
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Mult Dev Assembly 10/Jun/2024(PCN Assembly/Origin)
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2N7002x/BSSx/FDGx/FDVx/NDS06x 10/May/2022(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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FDG6301N(Datasheets)
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Binary Year Code Marking 15/Jan/2014(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi FDG6301N and the best services all around the world ET21516446. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi FDG6301N, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi FDG6301N is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDG6301N. We stock a large inventory containing a wide range of variety ET21516446, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FDG6301N. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21516446 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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