onsemi FDC8602

FDC8602 onsemi
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
350mOhm @ 1.2A, 10V
Gate Charge (Qg) (Max) @ Vgs:
2nC @ 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FDC8602 Models
Current - Continuous Drain (Id) @ 25°C:
1.2A
edacadModelUrl:
/en/models/3025438
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
100V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
20 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
70pF @ 50V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SuperSOT™-6
Packaging:
Tape & Reel (TR)
Power - Max:
690mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDC8602
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FDC8602. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 350mohm @ 1.2a, 10v. The maximum gate charge and given voltages include 2nc @ 10v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 1.2a. The product is available in 2 n-channel (dual) configuration. The onsemi's product offers user-desired applications. The product has a 100v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 20 weeks standard lead time. The product's input capacitance at maximum includes 70pf @ 50v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. supersot™-6 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 690mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdc8602, a base product number of the product. The product is designated with the ear99 code number.

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onsemi RoHS(Environmental Information)
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Mult Dev Assembly 23/Apr/2020(PCN Assembly/Origin)
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Marking Lay-out Implementation 07/Oct/2022(PCN Design/Specification)
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Marking Lay-out Implementation 15/Nov/2021(PCN Design/Specification)
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FDC8602(Datasheets)
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Binary Year Code Marking 15/Jan/2014(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)

Reviews

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi FDC8602 and the best services all around the world ET21516247. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi FDC8602, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi FDC8602 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDC8602. We stock a large inventory containing a wide range of variety ET21516247, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FDC8602. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21516247 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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