onsemi FDC6432SH

onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
90mOhm @ 2.4A, 10V
edacadModel:
FDC6432SH Models
Gate Charge (Qg) (Max) @ Vgs:
3.5nC @ 5V
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
2.4A, 2.5A
edacadModelUrl:
/en/models/979807
Configuration:
N and P-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V, 12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
270pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®, SyncFET™
Supplier Device Package:
SuperSOT™-6
Power - Max:
700mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDC6432
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FDC6432SH. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 90mohm @ 2.4a, 10v. The maximum gate charge and given voltages include 3.5nc @ 5v. In addition, it is reach unaffected. The continuous current drain at 25°C is 2.4a, 2.5a. The product is available in n and p-channel configuration. It is shipped in tape & reel (tr) package . The product has a 30v, 12v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 270pf @ 15v. The product is available in surface mount configuration. The product powertrench®, syncfet™, is a highly preferred choice for users. supersot™-6 is the supplier device package value. The maximum power of the product is 700mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdc6432, a base product number of the product. The product is designated with the ear99 code number.

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FDC6432SH(Datasheets)
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Mold Compound 08/April/2008(PCN Design/Specification)
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onsemi RoHS(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi FDC6432SH and the best services all around the world ET21516234. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi FDC6432SH, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi FDC6432SH is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDC6432SH. We stock a large inventory containing a wide range of variety ET21516234, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FDC6432SH. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21516234 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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