onsemi FDC6301N_G

onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
0.7nC @ 4.5V
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
220mA
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
9.5pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SuperSOT™-6
Packaging:
Tape & Reel (TR)
Power - Max:
700mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDC6301
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FDC6301N_G. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 4ohm @ 400ma, 4.5v. The maximum gate charge and given voltages include 0.7nc @ 4.5v. In addition, it is reach unaffected. The continuous current drain at 25°C is 220ma. The product is available in 2 n-channel (dual) configuration. The onsemi's product offers user-desired applications. The product has a 25v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 9.5pf @ 10v. The product is available in surface mount configuration. supersot™-6 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 700mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdc6301, a base product number of the product. The product is designated with the ear99 code number.

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Mult Device EOL 19/May/2017(PCN Obsolescence/ EOL)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi FDC6301N_G and the best services all around the world ET21516214. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi FDC6301N_G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi FDC6301N_G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDC6301N_G. We stock a large inventory containing a wide range of variety ET21516214, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FDC6301N_G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21516214 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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