onsemi FDC6301N

onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
0.7nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
FDC6301N Models
Current - Continuous Drain (Id) @ 25°C:
220mA
edacadModelUrl:
/en/models/965279
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
9.5pF @ 10V
standardLeadTime:
11 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SuperSOT™-6
Power - Max:
700mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDC6301
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FDC6301N. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 4ohm @ 400ma, 4.5v. The maximum gate charge and given voltages include 0.7nc @ 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 220ma. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 25v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 9.5pf @ 10v. It has a long 11 weeks standard lead time. The product is available in surface mount configuration. supersot™-6 is the supplier device package value. The maximum power of the product is 700mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdc6301, a base product number of the product. The product is designated with the ear99 code number.

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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Assembly/Test 27/Jan/2021(PCN Assembly/Origin)
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Marking Change 07/Oct/2022(PCN Design/Specification)
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Marking Change 17/Nov/2021(PCN Design/Specification)
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FDC6301N(Datasheets)
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Binary Year Code Marking 15/Jan/2014(PCN Packaging)
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Marking Change 07/Oct/2022(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi FDC6301N and the best services all around the world ET21516213. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi FDC6301N, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi FDC6301N is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDC6301N. We stock a large inventory containing a wide range of variety ET21516213, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FDC6301N. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21516213 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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