onsemi FDC6036P

FDC6036P onsemi
FDC6036P
onsemi

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-SSOT Flat-lead, SuperSOT™-6 FLMP
Rds On (Max) @ Id, Vgs:
44mOhm @ 5A, 4.5V
edacadModel:
FDC6036P Models
Gate Charge (Qg) (Max) @ Vgs:
14nC @ 4.5V
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
5A
edacadModelUrl:
/en/models/820599
Configuration:
2 P-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
992pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SuperSOT™-6
Power - Max:
900mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDC6036
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FDC6036P. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-ssot flat-lead, supersot™-6 flmp. It has a maximum Rds On and voltage of 44mohm @ 5a, 4.5v. The maximum gate charge and given voltages include 14nc @ 4.5v. In addition, it is reach unaffected. The continuous current drain at 25°C is 5a. The product is available in 2 p-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 992pf @ 10v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. supersot™-6 is the supplier device package value. The maximum power of the product is 900mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdc6036, a base product number of the product. The product is designated with the ear99 code number.

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FDC6036P(Datasheets)
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Mold Compound 27/March/2008(PCN Design/Specification)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative onsemi FDC6036P and the best services all around the world ET21516211. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, onsemi FDC6036P, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as onsemi, commonly silicon.

Our onsemi FDC6036P is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDC6036P. We stock a large inventory containing a wide range of variety ET21516211, differentiates by its unique features onsemi. We also have discounts for potential customers and let it until most of them avail from onsemi FDC6036P. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET21516211 from leading onsemi, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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