FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA, 3V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
5mOhm @ 17A, 10V, 2.4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
24nC @ 10V, 55nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
17A (Ta), 56A (Tc), 25A (Ta), 84A (Tc)
Configuration:
2 N-Channel (Dual) Asymmetrical
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1715pF @ 15V, 3825pF @ 15V
standardLeadTime:
8 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-PQFN (5x6)
Power - Max:
1W (Ta), 23W (Tc), 1.1W (Ta), 25W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMFD2
ECCN:
EAR99
