Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
2 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
19 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2.2V
Height:
1.05mm
Width:
6.1mm
Length:
5.1mm
Maximum Drain Source Resistance:
28 mΩ
Package Type:
DFN
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
26 A
Minimum Gate Threshold Voltage:
1.2V
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
8
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
28mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
5nC @ 10V
Vgs(th) (Max) @ Id:
2.2V @ 13µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
7.5A (Ta), 26A (Tc)
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
60V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
350pF @ 25V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-DFN (5x6) Dual Flag (SO8FL-Dual)
Packaging:
Tape & Reel (TR)
Power - Max:
3W (Ta), 19W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMFD5
ECCN:
EAR99
