Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
2 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
800 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.6V
Height:
0.85mm
Width:
1.6mm
Length:
2mm
Maximum Drain Source Resistance:
378 mΩ
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
1.8 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate, 4V Drive
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
188mOhm @ 900mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
2nC @ 10V
Vgs(th) (Max) @ Id:
2.6V @ 1mA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
1.8A
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
88pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-88FL/MCPH6
Packaging:
Tape & Reel (TR)
Power - Max:
800mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
MCH6661
ECCN:
EAR99
