Maximum Drain Source Voltage:
450 V
Typical Gate Charge @ Vgs:
3.7 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.6 W
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
4.5V
Height:
1.375mm
Width:
3.9mm
Length:
4.9mm
Maximum Drain Source Resistance:
12.1 Ω
Package Type:
SOIC
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
700 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
12.1Ohm @ 350mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
3.7nC @ 10V
REACH Status:
REACH Unaffected
edacadModel:
FW276-TL-2H Models
Current - Continuous Drain (Id) @ 25°C:
700mA
edacadModelUrl:
/en/models/5022555
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
450V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
55pF @ 20V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Power - Max:
1.6W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FW276
ECCN:
EAR99
