Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Width:
2.3mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.6V
Package Type:
ECH8, SOT-28FL
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11.8 nC @ 10 V
Channel Type:
N
Length:
2.9mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.3 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.88mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
55 mΩ
FET Feature:
Logic Level Gate, 4V Drive
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
8-SMD, Flat Leads
Rds On (Max) @ Id, Vgs:
24mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
11.8nC @ 10V
Vgs(th) (Max) @ Id:
2.6V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
ECH8659-TL-W Models
Current - Continuous Drain (Id) @ 25°C:
7A
edacadModelUrl:
/en/models/5845543
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
710pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-28FL/ECH8
Packaging:
Tape & Reel (TR)
Power - Max:
1.3W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ECH8659
ECCN:
EAR99
